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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION *With TO-220F package *Complement to type 2SD1827 *High DC current gain. *Large current capacity and wide ASO. *Low saturation voltage. *DARLINGTON APPLICATIONS *Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -10 -15 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1225 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=? IC=-5A ; IB=-10mA IC=-5A ; IB=-10mA VCB=-40V;IE=0 VEB=-5V;IC=0 IC=-5A ; VCE=-2V 2000 5000 MIN -70 -60 -1.0 -1.5 -2.0 -0.1 -3.0 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4B 0.5 1.5 1.7 s s s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1225 Fig.2 Outline dimensions 3 |
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